Triode/MOS tube/transistor/module
HXY MOSFET (Huaxuanyang Electronics)
Fabricants
N-channel, VDSS withstand voltage 30V, ID current 150A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,
Description
N-channel, 25V, 60A, 9mΩ@10V
Description
onsemi (Ansemi)
Fabricants
N-Channel, PowerTrench MOSFET, 60V, 80 A, 3.8 mΩ
Description
onsemi (Ansemi)
Fabricants
LRC (Leshan Radio)
Fabricants
NPN, Vceo=50V, Ic=100mA
Description
DIODES (US and Taiwan)
Fabricants
onsemi (Ansemi)
Fabricants
VBsemi (Wei Bi)
Fabricants
LRC (Leshan Radio)
Fabricants
onsemi (Ansemi)
Fabricants
APM (Jonway Microelectronics)
Fabricants
VBsemi (Wei Bi)
Fabricants
TWGMC (Taiwan Dijia)
Fabricants
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 120@50mA,1V
Description
Potens (Bosheng Semiconductor)
Fabricants
P-channel, -30V, -7A
Description
Wuxi Unisplendour
Fabricants
ST (STMicroelectronics)
Fabricants
onsemi (Ansemi)
Fabricants