Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricants
VBsemi (Wei Bi)
Fabricants
Infineon (Infineon)
Fabricants
N-channel, 55V, 169A, 5.3mΩ@10V
Description
N+P dual channel, 30V/6A(-30V/-6.5A)
Description
NCE (Wuxi New Clean Energy)
Fabricants
NCE (Wuxi New Clean Energy)
Fabricants
APM (Jonway Microelectronics)
Fabricants
VISHAY (Vishay)
Fabricants
ST (STMicroelectronics)
Fabricants
ST (STMicroelectronics)
Fabricants
ST (STMicroelectronics)
Fabricants
CJ (Jiangsu Changdian/Changjing)
Fabricants
RealChip (Shenxin Semiconductor)
Fabricants
BL (Shanghai Belling)
Fabricants
onsemi (Ansemi)
Fabricants
This NPN transistor is suitable for general purpose amplifier applications. This device features SOT-723 encapsulation and is suitable for low power surface mount applications where board space is at a premium.
Description
AGM-Semi (core control source)
Fabricants
DIODES (US and Taiwan)
Fabricants