Triode/MOS tube/transistor/module
VISHAY (Vishay)
Fabricants
VBsemi (Wei Bi)
Fabricants
YANGJIE (Yang Jie)
Fabricants
Hottech (Heketai)
Fabricants
PNP, Vceo=-50V, Ic=-2A
Description
Type: N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 2.9A Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 45mΩ@10V, 2.9A working Temperature: +150℃@(Tj)
Description
VBsemi (Wei Bi)
Fabricants
YANGJIE (Yang Jie)
Fabricants
UMH1N-F2-0000HF
Description
TECH PUBLIC (Taizhou)
Fabricants
onsemi (Ansemi)
Fabricants
TMC (Taiwan Mao)
Fabricants
Type N VDS(V) 60V VGS(V) ±20V Vth(V) 1.6V RDS(ON)(mΩ) 30mΩ ID(A) 30A
Description
N-channel, 800V, 7A, 1.6Ω
Description
N-channel 20V 3A
Description
CJ (Jiangsu Changdian/Changjing)
Fabricants
PNP, Vceo=-80V, Ic=-0.4A, hfe=120~240
Description
VISHAY (Vishay)
Fabricants
N-channel, 30V, 20A, 0.016Ω@4.5V
Description
APM (Jonway Microelectronics)
Fabricants
LRC (Leshan Radio)
Fabricants
MSKSEMI (Mesenco)
Fabricants
Triode Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 1.5A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 200@100mA, 1V 200-350 PNP
Description