Triode/MOS tube/transistor/module
Wuxi Unisplendour
Fabricants
Wuxi Unisplendour
Fabricants
JUNSHINE (Junshine Technology)
Fabricants
CJ (Jiangsu Changdian/Changjing)
Fabricants
VBsemi (Wei Bi)
Fabricants
DIODES (US and Taiwan)
Fabricants
P-channel, -60V, -2.1A
Description
NPN 32V 1A 2W
Description
CJ (Jiangsu Changdian/Changjing)
Fabricants
VISHAY (Vishay)
Fabricants
MICROCHIP (US Microchip)
Fabricants
Slkor (Sakor Micro)
Fabricants
GOFORD (valley peak)
Fabricants
Crystal Conductor Microelectronics
Fabricants
onsemi (Ansemi)
Fabricants
Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.
Description
BORN (Born Semiconductor)
Fabricants
MOSFET Type N Drain-Source Voltage (Vdss) (V) 85 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 4.2/5 Continuous Drain Current ID (A) 140
Description