SIRA04DP-T1-GE3

Product Category:
The SIRA04DP-T1-GE3 belongs to the category of semiconductor devices, specifically a power MOSFET.

Basic Information Overview: - Category: Semiconductor device - Use: Power switching applications - Characteristics: High voltage capability, low on-resistance, fast switching speed - Package: DPAK (TO-252) - Essence: Efficient power management - Packaging/Quantity: Typically packaged in reels of 2500 units

Specifications: - Voltage Rating: 40V - Current Rating: 60A - On-Resistance: 4.5mΩ - Gate Charge: 45nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain

Functional Features: - High voltage capability for power applications - Low on-resistance for minimal power loss - Fast switching speed for efficient operation

Advantages and Disadvantages: - Advantages: - High voltage capability - Low on-resistance - Fast switching speed - Disadvantages: - Sensitivity to static electricity - Limited maximum current compared to some alternative models

Working Principles: The SIRA04DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the source and drain terminals.

Detailed Application Field Plans: - Power supplies - Motor control - Inverters - DC-DC converters

Detailed and Complete Alternative Models: - Alternative Model 1: SIRA06DP-T1-GE3 - Voltage Rating: 60V - Current Rating: 80A - Alternative Model 2: SIRA08DP-T1-GE3 - Voltage Rating: 80V - Current Rating: 100A

In conclusion, the SIRA04DP-T1-GE3 is a high-performance power MOSFET suitable for various power switching applications, offering high voltage capability, low on-resistance, and fast switching speed. Its application spans across power supplies, motor control, inverters, and DC-DC converters. While it has advantages such as efficient power management, it is important to consider its sensitivity to static electricity and compare its specifications with alternative models to ensure suitability for specific applications.