SIHH14N65E-T1-GE3

Introduction

The SIHH14N65E-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the SIHH14N65E-T1-GE3, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Device
• Use: Power MOSFET for electronic applications
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: Efficient power management and control
• Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer

Specifications

• Voltage Rating: 650V
• Current Rating: 14A
• On-Resistance: 0.65Ω
• Gate Charge: 38nC
• Operating Temperature: -55°C to 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3

Detailed Pin Configuration

The SIHH14N65E-T1-GE3 has a standard TO-220AB package with three pins: 1. Gate (G): Input pin for controlling the switching of the MOSFET 2. Drain (D): Output pin connected to the load 3. Source (S): Ground reference for the MOSFET

Functional Features

• Fast Switching Speed: Enables efficient power control in high-frequency applications
• Low On-Resistance: Minimizes power loss and heat generation
• High Voltage Capability: Suitable for high-voltage circuits and systems
• ESD Protection: Enhanced electrostatic discharge protection for reliability

Advantages and Disadvantages

Advantages

• Efficient power management
• Fast response time
• Low power dissipation

Disadvantages

• Sensitivity to voltage spikes
• Gate driver requirements for optimal performance

Working Principles

The SIHH14N65E-T1-GE3 operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can effectively switch on and off, allowing precise control of power flow in electronic circuits.

Detailed Application Field Plans

The SIHH14N65E-T1-GE3 is commonly used in the following application fields: - Switched Mode Power Supplies (SMPS) - Motor Control Systems - Solar Inverters - LED Lighting - Uninterruptible Power Supplies (UPS)

Detailed and Complete Alternative Models

• SIHH10N60E-T1-GE3: Similar specifications with a lower current rating
• SIHH20N50E-T1-GE3: Higher current rating with comparable voltage and on-resistance
• SIHH12N80E-T1-GE3: Lower on-resistance and higher voltage rating

In conclusion, the SIHH14N65E-T1-GE3 power MOSFET offers efficient power management and control capabilities, making it suitable for a wide range of electronic applications. Its unique characteristics, functional features, and working principles position it as a valuable component in modern electronic systems.

(Word count: 498)