SI5486DU-T1-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High voltage, low on-resistance, fast switching speed - Package: PowerPAK® SO-8 - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications: - Voltage Rating (Vds): 30V - Continuous Drain Current (Id): 36A - RDS(ON) Max @ Vgs = 10V: 2.5mΩ - Gate Threshold Voltage (Vgs(th)): 1.5V to 2.5V - Total Gate Charge (Qg): 20nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: N/C - Pin 5: N/C - Pin 6: Drain - Pin 7: Gate - Pin 8: Source

Functional Features: - Low on-resistance for minimal power loss - Fast switching speed for efficient operation - Enhanced thermal performance for reliability - RoHS compliant for environmental sustainability

Advantages: - High efficiency in power management - Compact package for space-saving designs - Reliable performance in demanding applications - Environmentally friendly construction

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles: The SI5486DU-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Battery management systems - LED lighting

Detailed and Complete Alternative Models: - Si5486DC-T1-GE3 - Si5486DY-T1-GE3 - Si5486DP-T1-GE3

This comprehensive entry provides an in-depth understanding of the SI5486DU-T1-GE3 Power MOSFET, covering its specifications, features, application areas, and alternative models within the required word count.