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SI2307BDS-T1-E3
Product Overview
Category
The SI2307BDS-T1-E3 belongs to the category of power MOSFETs.
Use
It is commonly used for switching and amplifying electronic signals in various applications.
Characteristics
- Low on-resistance
- High current capability
- Fast switching speed
- Low gate drive voltage
- Small package size
Package
The SI2307BDS-T1-E3 is typically available in a small SOT-23 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is usually supplied in reels with a quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 20V
- Continuous Drain Current (ID): 2.5A
- On-Resistance (RDS(ON)): 75mΩ
- Power Dissipation (PD): 1.25W
- Gate-Source Voltage (VGS): ±8V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI2307BDS-T1-E3 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
- Low gate drive voltage for ease of control
- High current capability for versatile applications
Advantages and Disadvantages
Advantages
- Efficient power management
- Compact package size
- Versatile application range
Disadvantages
- Limited maximum drain-source voltage
- Sensitivity to static electricity
Working Principles
The SI2307BDS-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SI2307BDS-T1-E3 is widely used in: - Battery management systems - DC-DC converters - Motor control circuits - LED lighting applications - Portable electronic devices
Detailed and Complete Alternative Models
Some alternative models to the SI2307BDS-T1-E3 include: - SI2307BDS-T1-GE3 - SI2307BDS-T1-E3-ND - SI2307BDS-T1-E3-AY
In conclusion, the SI2307BDS-T1-E3 power MOSFET offers efficient power management and control in a compact package, making it suitable for a wide range of electronic applications.
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Énumérez 10 questions et réponses courantes liées à l'application de SI2307BDS-T1-E3 dans les solutions techniques
What is the maximum drain-source voltage rating of SI2307BDS-T1-E3?
- The maximum drain-source voltage rating of SI2307BDS-T1-E3 is 20V.
What is the continuous drain current rating of SI2307BDS-T1-E3?
- The continuous drain current rating of SI2307BDS-T1-E3 is 4.3A.
What is the on-resistance (RDS(on)) of SI2307BDS-T1-E3?
- The on-resistance (RDS(on)) of SI2307BDS-T1-E3 is typically 25mΩ at VGS = 4.5V.
What is the gate threshold voltage (VGS(th)) of SI2307BDS-T1-E3?
- The gate threshold voltage (VGS(th)) of SI2307BDS-T1-E3 is typically 1.0V to 2.5V.
Is SI2307BDS-T1-E3 suitable for use in battery protection circuits?
- Yes, SI2307BDS-T1-E3 is suitable for use in battery protection circuits due to its low on-resistance and low gate threshold voltage.
Can SI2307BDS-T1-E3 be used in load switching applications?
- Yes, SI2307BDS-T1-E3 can be used in load switching applications due to its high drain-source voltage rating and low on-resistance.
What is the operating temperature range of SI2307BDS-T1-E3?
- The operating temperature range of SI2307BDS-T1-E3 is -55°C to 150°C.
Does SI2307BDS-T1-E3 have built-in ESD protection?
- Yes, SI2307BDS-T1-E3 has built-in ESD protection, making it suitable for applications where ESD robustness is required.
What package type does SI2307BDS-T1-E3 come in?
- SI2307BDS-T1-E3 comes in a compact and space-saving SOT-23 package.
Is SI2307BDS-T1-E3 RoHS compliant?
- Yes, SI2307BDS-T1-E3 is RoHS compliant, meeting environmental regulations for lead-free and hazardous substance-free materials.