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STGW25M120DF3
Introduction
The STGW25M120DF3 is a power semiconductor device belonging to the category of insulated-gate bipolar transistors (IGBTs). This device is widely used in various applications due to its high efficiency, low switching losses, and robustness. The STGW25M120DF3 is designed to provide reliable and efficient power control in diverse electronic systems.
Basic Information Overview
- Category: Insulated-Gate Bipolar Transistor (IGBT)
- Use: Power control in electronic systems
- Characteristics: High efficiency, low switching losses, robust design
- Package: TO-247
- Essence: Efficient power control
- Packaging/Quantity: Typically packaged individually
Specifications
- Voltage Rating: 1200V
- Current Rating: 25A
- Maximum Operating Temperature: 150°C
- Gate-Emitter Voltage: ±20V
- Collector-Emitter Saturation Voltage: 1.8V
- Turn-On Delay Time: 55ns
- Turn-Off Delay Time: 140ns
Detailed Pin Configuration
The STGW25M120DF3 features a standard TO-247 pin configuration: 1. Collector (C) 2. Gate (G) 3. Emitter (E)
Functional Features
- High voltage capability
- Low saturation voltage
- Fast switching speed
- Robust and reliable performance
Advantages and Disadvantages
Advantages
- High efficiency
- Low switching losses
- Robust design
- Fast switching speed
Disadvantages
- Higher cost compared to traditional power transistors
- Sensitive to overvoltage conditions
Working Principles
The STGW25M120DF3 operates based on the principles of IGBT technology, where it combines the advantages of MOSFETs and bipolar junction transistors. When a suitable gate voltage is applied, the device allows a controlled flow of current between the collector and emitter, enabling efficient power control in electronic systems.
Detailed Application Field Plans
The STGW25M120DF3 finds extensive use in various applications, including: - Motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Induction heating systems - Welding equipment
Detailed and Complete Alternative Models
Some alternative models to the STGW25M120DF3 include: - Infineon Technologies' IKW25N120T2 - ON Semiconductor's NGTB25N120FLWG - Toshiba's GT25Q101
In conclusion, the STGW25M120DF3 is a versatile IGBT device with high efficiency, robustness, and fast switching characteristics, making it an ideal choice for power control in diverse electronic systems.
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Énumérez 10 questions et réponses courantes liées à l'application de STGW25M120DF3 dans les solutions techniques
What is the maximum voltage rating of STGW25M120DF3?
- The maximum voltage rating of STGW25M120DF3 is 1200V.
What is the maximum continuous drain current of STGW25M120DF3?
- The maximum continuous drain current of STGW25M120DF3 is 25A.
What type of package does STGW25M120DF3 come in?
- STGW25M120DF3 comes in a TO-247 package.
What are the typical applications for STGW25M120DF3?
- STGW25M120DF3 is commonly used in applications such as motor drives, solar inverters, welding equipment, and UPS systems.
Does STGW25M120DF3 have built-in protection features?
- Yes, STGW25M120DF3 has built-in protection features including overcurrent protection and thermal shutdown.
What is the on-state voltage drop of STGW25M120DF3?
- The on-state voltage drop of STGW25M120DF3 is typically around 1.7V at a current of 25A.
Is STGW25M120DF3 suitable for high-frequency switching applications?
- Yes, STGW25M120DF3 is designed for high-frequency switching applications.
What is the operating temperature range of STGW25M120DF3?
- The operating temperature range of STGW25M120DF3 is -40°C to 150°C.
Can STGW25M120DF3 be used in parallel configurations for higher current handling?
- Yes, STGW25M120DF3 can be used in parallel configurations to increase current handling capability.
Does STGW25M120DF3 require external gate drivers?
- Yes, STGW25M120DF3 requires external gate drivers for proper operation.