Rohm Semiconductor
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2SB1132T100P
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2SB1132T100P

Product Overview

Category

The 2SB1132T100P belongs to the category of bipolar transistors.

Use

It is commonly used as a switching device in electronic circuits.

Characteristics

  • Low power dissipation
  • High current capability
  • Fast switching speed

Package

The 2SB1132T100P is typically available in a TO-220 package.

Essence

This transistor is essential for controlling the flow of current in electronic devices.

Packaging/Quantity

It is usually packaged individually and sold in quantities suitable for electronic projects.

Specifications

  • Collector-Base Voltage (VCBO): 60V
  • Collector Current (IC): 3A
  • Power Dissipation (PD): 10W
  • Transition Frequency (ft): 30MHz
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The 2SB1132T100P has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Good linearity

Advantages

  • Suitable for low-power applications
  • Fast switching speed
  • Reliable performance

Disadvantages

  • Limited power dissipation capability
  • Sensitive to overvoltage conditions

Working Principles

The 2SB1132T100P operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.

Detailed Application Field Plans

This transistor is commonly used in: - Audio amplifiers - Switching circuits - Voltage regulators

Detailed and Complete Alternative Models

Some alternative models to the 2SB1132T100P include: - 2N3904 - BC547 - 2SC945

In conclusion, the 2SB1132T100P is a versatile bipolar transistor with fast switching speed and high current capability, making it suitable for various electronic applications.

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Énumérez 10 questions et réponses courantes liées à l'application de 2SB1132T100P dans les solutions techniques

Sure, here are 10 common questions and answers related to the application of 2SB1132T100P in technical solutions:

  1. What is the maximum collector current of 2SB1132T100P?

    • The maximum collector current of 2SB1132T100P is 3A.

  2. What is the maximum collector-emitter voltage of 2SB1132T100P?

    • The maximum collector-emitter voltage of 2SB1132T100P is 50V.

  3. What is the power dissipation of 2SB1132T100P?

    • The power dissipation of 2SB1132T100P is 1W.

  4. What are the typical applications of 2SB1132T100P?

    • 2SB1132T100P is commonly used in audio amplification, switching circuits, and power supply control applications.

  5. What is the gain (hFE) of 2SB1132T100P?

    • The gain (hFE) of 2SB1132T100P typically ranges from 60 to 320.

  6. Is 2SB1132T100P suitable for high-frequency applications?

    • No, 2SB1132T100P is not suitable for high-frequency applications due to its limited frequency response.

  7. What are the recommended operating conditions for 2SB1132T100P?

    • The recommended operating conditions include a collector current (IC) of 1A, a collector-emitter voltage (VCE) of 5V, and a base current (IB) of 0.1A.

  8. Can 2SB1132T100P be used in temperature-sensitive environments?

    • Yes, 2SB1132T100P has a wide operating temperature range and can be used in temperature-sensitive environments.

  9. Does 2SB1132T100P require external heat sinking?

    • It is recommended to use external heat sinking when operating 2SB1132T100P near its maximum power dissipation to ensure proper thermal management.

  10. Are there any specific precautions to consider when using 2SB1132T100P in technical solutions?

    • It is important to avoid exceeding the maximum ratings specified in the datasheet, ensure proper biasing and thermal management, and protect the device from overcurrent and overvoltage conditions.

I hope these questions and answers provide helpful information for the application of 2SB1132T100P in technical solutions. Let me know if you need further assistance!