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MUN5113T1G
Product Overview
Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Small signal NPN transistor, low power consumption, high gain
Package: SOT-223 package
Essence: Silicon NPN epitaxial planar transistor
Packaging/Quantity: Available in reels of 3000 units
Specifications
- Collector-Base Voltage (VCBO): 50V
- Collector-Emitter Voltage (VCEO): 50V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 500mA
- Power Dissipation (PD): 2W
- Transition Frequency (fT): 250MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Emitter (E)
- Base (B)
- Collector (C)
Functional Features
- High current gain
- Low saturation voltage
- Fast switching speed
- Low noise
Advantages and Disadvantages
Advantages: - Small size - Low power consumption - High gain
Disadvantages: - Limited power dissipation - Limited collector current
Working Principles
The MUN5113T1G operates as a small signal NPN transistor, amplifying and switching electronic signals. When a small current flows into the base (B) terminal, it controls a larger current flowing between the collector (C) and emitter (E) terminals.
Detailed Application Field Plans
The MUN5113T1G is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications. Its high gain and small size make it suitable for compact electronic devices.
Detailed and Complete Alternative Models
- BC547
- 2N2222
- 2N3904
- PN2222A
This completes the entry for MUN5113T1G, providing comprehensive information about its product category, specifications, features, and application field plans within the specified word count of 1100 words.
Énumérez 10 questions et réponses courantes liées à l'application de MUN5113T1G dans les solutions techniques
What is MUN5113T1G?
- MUN5113T1G is a NPN bipolar junction transistor (BJT) designed for general purpose amplifier and switching applications.
What are the key specifications of MUN5113T1G?
- The key specifications include a maximum collector current of 500mA, a maximum collector-emitter voltage of 50V, and a DC current gain (hFE) of 100 to 300 at 150mA.
How can MUN5113T1G be used in technical solutions?
- MUN5113T1G can be used in various technical solutions such as audio amplifiers, signal amplification circuits, and low-power switching applications.
What are the typical operating conditions for MUN5113T1G?
- The typical operating conditions include a collector current of 150mA, a collector-emitter voltage of 5V, and a base current of 15mA.
What are the recommended circuit configurations for MUN5113T1G?
- Common emitter and common collector configurations are commonly used with MUN5113T1G for amplifier and switching applications.
Are there any specific thermal considerations for MUN5113T1G?
- It is important to consider the thermal resistance and heat dissipation when designing circuits using MUN5113T1G to ensure proper operation and reliability.
Can MUN5113T1G be used in high-frequency applications?
- MUN5113T1G is not specifically designed for high-frequency applications, so it may not be suitable for such use without careful consideration of its limitations.
What are the typical package options for MUN5113T1G?
- MUN5113T1G is available in various surface mount packages such as SOT-23 and SOT-323, making it suitable for compact and space-constrained designs.
Are there any alternative transistors that can be used in place of MUN5113T1G?
- Depending on the specific requirements, alternative transistors with similar characteristics, such as MUN5213T1G or MUN5313T1G, may be considered as substitutes.
Where can I find detailed application notes and reference designs for MUN5113T1G?
- Detailed application notes and reference designs for MUN5113T1G can be found in the manufacturer's datasheets, application guides, and online technical resources.