MMBF5484LT1G

Product Overview

Category

The MMBF5484LT1G belongs to the category of field-effect transistors (FETs).

Use

It is commonly used as a small-signal amplifier or switch in electronic circuits.

Characteristics

• Low power consumption
• High input impedance
• Small package size
• Suitable for low-voltage applications

Package

The MMBF5484LT1G is typically available in a SOT-23 package.

Essence

This FET is essential for amplifying weak signals and controlling the flow of current in electronic devices.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Gate-Source Voltage (VGS): ±20V
• Drain Current (ID): 10mA
• Power Dissipation (PD): 225mW
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The MMBF5484LT1G has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High input impedance allows for minimal loading of the signal source.
• Low power consumption makes it suitable for battery-operated devices.
• Fast switching speed enables efficient signal processing.

Advantages and Disadvantages

Advantages

• Small package size saves space on circuit boards.
• Low power consumption prolongs battery life in portable devices.
• High input impedance minimizes signal distortion.

Disadvantages

• Limited maximum drain-source voltage compared to other FETs.
• Relatively low drain current handling capacity.

Working Principles

The MMBF5484LT1G operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the source and drain terminals.

Detailed Application Field Plans

Audio Amplification

The MMBF5484LT1G can be used in audio amplifiers to boost weak signals from microphones or musical instruments.

Signal Switching

It is suitable for use in electronic switches to control the flow of signals in communication systems.

Sensor Interfaces

In sensor applications, this FET can amplify and process weak sensor signals with high accuracy.

Detailed and Complete Alternative Models

1. 2N7002LT1G
2. BSS138LT1G
3. DMN65D8L-7

In conclusion, the MMBF5484LT1G is a versatile field-effect transistor with characteristics that make it suitable for various low-power electronic applications. Its compact size, low power consumption, and high input impedance are advantageous, although its limitations in maximum voltage and current handling should be considered when selecting alternative models for specific applications.

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