NAND16GW3D2BN6E

Basic Information Overview

• Category: Electronic Component
• Use: Data Storage
• Characteristics:
  • Non-volatile memory
  • High storage capacity
  • Fast read and write speeds
• Package: BGA (Ball Grid Array)
• Essence: NAND Flash Memory
• Packaging/Quantity: Single unit

Specifications

• Capacity: 16GB
• Interface: SATA III
• Form Factor: 2.5-inch
• Technology: 3D NAND
• Endurance: 300 TBW (Terabytes Written)
• MTBF (Mean Time Between Failures): 1.5 million hours

Detailed Pin Configuration

The NAND16GW3D2BN6E follows the standard pin configuration for SATA III interface. It has a total of 7 pins, including power and data transfer pins.

1. VCC: Power supply pin (+5V)
2. GND: Ground pin
3. D0: Data bit 0
4. D1: Data bit 1
5. D2: Data bit 2
6. D3: Data bit 3
7. NC: No connection

Functional Features

• High-speed data transfer: The NAND16GW3D2BN6E offers fast read and write speeds, allowing for quick access to stored data.
• Large storage capacity: With a capacity of 16GB, it provides ample space for storing various types of data.
• Reliable performance: The NAND flash memory technology ensures reliable and consistent performance over time.
• Low power consumption: It operates efficiently, consuming minimal power during data operations.
• Shock and vibration resistance: The BGA package design enhances durability, making it resistant to shocks and vibrations.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast data transfer speeds - Reliable performance - Low power consumption

Disadvantages: - Limited compatibility with older systems - Relatively higher cost compared to traditional hard drives

Working Principles

The NAND16GW3D2BN6E utilizes NAND flash memory technology, which stores data in a series of memory cells. These cells consist of floating-gate transistors that can retain charge even when the power is turned off. The data is stored as electrical charges within these cells, and the presence or absence of charge determines the binary value (0 or 1) of each memory cell.

During read operations, the controller sends signals to access specific memory cells and retrieve the stored data. Write operations involve applying voltage to the appropriate memory cells to modify their charge levels, thereby changing the stored data.

Detailed Application Field Plans

The NAND16GW3D2BN6E is widely used in various electronic devices and applications, including: - Solid State Drives (SSDs) - Portable storage devices - Embedded systems - Industrial automation - Automotive electronics

Its high storage capacity, fast data transfer speeds, and reliability make it suitable for applications that require efficient and secure data storage.

Detailed and Complete Alternative Models

1. NAND32GW3D2BN6E: 32GB capacity, SATA III interface, 3D NAND technology.
2. NAND64GW3D2BN6E: 64GB capacity, SATA III interface, 3D NAND technology.
3. NAND128GW3D2BN6E: 128GB capacity, SATA III interface, 3D NAND technology.
4. NAND256GW3D2BN6E: 256GB capacity, SATA III interface, 3D NAND technology.

These alternative models offer increased storage capacities while maintaining similar specifications and features to the NAND16GW3D2BN6E.

In conclusion, the NAND16GW3D2BN6E is a high-capacity NAND flash memory component used for data storage. Its fast read and write speeds, large storage capacity, and reliability make it suitable for various applications in different industries. While it may have limited compatibility and a higher cost compared to traditional hard drives, its advantages outweigh the disadvantages for many users.