N25Q512A13G1241F TR

Product Overview

Category

The N25Q512A13G1241F TR belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic devices.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 512 megabits (64 megabytes).
• Fast read and write speeds: Enables quick access to stored data.
• Low power consumption: Optimized for energy efficiency.
• Wide operating temperature range: Suitable for various environments.

Package

The N25Q512A13G1241F TR is available in a compact surface-mount package.

Essence

This product is an advanced flash memory device that provides reliable and high-performance data storage capabilities.

Packaging/Quantity

The N25Q512A13G1241F TR is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Capacity: 512 megabits (64 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 108 MHz
• Erase/Program Time: Varies depending on operation

Detailed Pin Configuration

The N25Q512A13G1241F TR features a standard pin configuration for SPI flash memory devices. The pins are as follows:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed data transfer: The SPI interface allows for fast communication between the device and the host system.
• Flexible erase and program operations: Supports sector, block, and chip erase, as well as byte and page programming.
• Advanced security features: Provides hardware-based protection mechanisms to safeguard stored data.
• Efficient power management: Incorporates low-power modes to minimize energy consumption.
• Error detection and correction: Implements error checking and correcting codes to ensure data integrity.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Wide operating temperature range
• Secure data protection features

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (number of erase/write cycles)

Working Principles

The N25Q512A13G1241F TR utilizes flash memory technology, which stores data in a series of memory cells. These cells consist of floating-gate transistors that can retain charge even when power is removed. The device uses the SPI interface to communicate with the host system, enabling efficient data transfer and access.

Detailed Application Field Plans

The N25Q512A13G1241F TR is widely used in various electronic devices and applications, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment, navigation, instrument clusters) - Industrial equipment (e.g., control systems, data loggers, robotics) - Networking devices (e.g., routers, switches, modems) - Medical devices (e.g., patient monitoring, diagnostic equipment)

Detailed and Complete Alternative Models

• N25Q256A13EF840E
• N25Q128A13EF840E
• N25Q064A13EF840E
• N25Q032A13EF840E
• N25Q016A13EF840E

These alternative models offer varying capacities and features to suit different application requirements.

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