L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
MT49H8M36BM-33:B TR

MT49H8M36BM-33:B TR

Product Overview

Category

The MT49H8M36BM-33:B TR belongs to the category of memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable data retention

Package

The MT49H8M36BM-33:B TR comes in a compact and durable package, designed to protect the memory module from external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

Each package of MT49H8M36BM-33:B TR contains a single memory module.

Specifications

  • Model: MT49H8M36BM-33:B TR
  • Memory Type: Random Access Memory (RAM)
  • Capacity: 8 gigabits (1 gigabyte)
  • Speed: 33 MHz
  • Voltage: 3.3 volts
  • Interface: Parallel
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT49H8M36BM-33:B TR has a specific pin configuration that enables it to be connected to other components within an electronic device. The detailed pin configuration is as follows:

  • Pin 1: VDD
  • Pin 2: DQ0
  • Pin 3: DQ1
  • Pin 4: DQ2
  • Pin 5: DQ3
  • Pin 6: DQ4
  • Pin 7: DQ5
  • Pin 8: DQ6
  • Pin 9: DQ7
  • Pin 10: DQ8
  • Pin 11: DQ9
  • Pin 12: DQ10
  • Pin 13: DQ11
  • Pin 14: DQ12
  • Pin 15: DQ13
  • Pin 16: DQ14
  • Pin 17: DQ15
  • Pin 18: DQ16
  • Pin 19: DQ17
  • Pin 20: DQ18
  • Pin 21: DQ19
  • Pin 22: DQ20
  • Pin 23: DQ21
  • Pin 24: DQ22
  • Pin 25: DQ23
  • Pin 26: DQ24
  • Pin 27: DQ25
  • Pin 28: DQ26
  • Pin 29: DQ27
  • Pin 30: DQ28
  • Pin 31: DQ29
  • Pin 32: DQ30
  • Pin 33: DQ31
  • Pin 34: VSS

Functional Features

The MT49H8M36BM-33:B TR offers the following functional features:

  1. High-speed data transfer: The memory module allows for fast read and write operations, enabling efficient data processing.
  2. Large storage capacity: With a capacity of 8 gigabits, this product can store a significant amount of digital information.
  3. Low power consumption: The MT49H8M36BM-33:B TR is designed to minimize power usage, making it suitable for battery-powered devices.
  4. Reliable data retention: The memory module ensures data integrity and long-term storage reliability.

Advantages and Disadvantages

Advantages

  • High-speed performance enhances overall system efficiency.
  • Large storage capacity accommodates extensive data requirements.
  • Low power consumption prolongs battery life in portable devices.
  • Reliable data retention ensures data integrity over time.

Disadvantages

  • Limited compatibility with certain device architectures.
  • Higher cost compared to lower-capacity memory modules.
  • Requires proper handling and installation to prevent damage.

Working Principles

The MT49H8M36BM-33:B TR operates based on the principles of random access memory. It stores data in a matrix of cells, each identified by a unique address. The memory module can read or write data to any specific address location within its capacity, allowing for fast and flexible data manipulation.

Detailed Application Field Plans

The MT49H8M36BM-33:B TR is widely used in various electronic devices that require high-speed data storage and retrieval. Some detailed application field plans include:

  1. Personal Computers: Used as main memory in desktops and laptops to enhance system performance.
  2. Servers: Employed in server systems to handle large-scale data processing and storage requirements.
  3. Networking Equipment: Utilized in routers and switches to facilitate efficient data transfer.
  4. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and digital televisions for enhanced functionality.

Detailed and Complete Alternative Models

  1. MT49H8M36CM-

Énumérez 10 questions et réponses courantes liées à l'application de MT49H8M36BM-33:B TR dans les solutions techniques

Sure! Here are 10 common questions and answers related to the application of MT49H8M36BM-33:B TR in technical solutions:

  1. Q: What is the MT49H8M36BM-33:B TR? A: The MT49H8M36BM-33:B TR is a specific model of synchronous dynamic random-access memory (SDRAM) used in various technical solutions.

  2. Q: What is the capacity of the MT49H8M36BM-33:B TR? A: The MT49H8M36BM-33:B TR has a capacity of 8 gigabits (Gb), which is equivalent to 1 gigabyte (GB).

  3. Q: What is the operating voltage of the MT49H8M36BM-33:B TR? A: The MT49H8M36BM-33:B TR operates at a voltage of 1.35 volts (V).

  4. Q: What is the clock frequency supported by the MT49H8M36BM-33:B TR? A: The MT49H8M36BM-33:B TR supports a clock frequency of up to 333 megahertz (MHz).

  5. Q: What is the data transfer rate of the MT49H8M36BM-33:B TR? A: The MT49H8M36BM-33:B TR has a maximum data transfer rate of 2666 megabits per second (Mbps).

  6. Q: What is the package type of the MT49H8M36BM-33:B TR? A: The MT49H8M36BM-33:B TR comes in a ball grid array (BGA) package.

  7. Q: What is the temperature range for the operation of the MT49H8M36BM-33:B TR? A: The MT49H8M36BM-33:B TR is designed to operate within a temperature range of -40°C to +85°C.

  8. Q: What are the typical applications of the MT49H8M36BM-33:B TR? A: The MT49H8M36BM-33:B TR is commonly used in networking equipment, servers, and other high-performance computing systems.

  9. Q: Does the MT49H8M36BM-33:B TR support error correction code (ECC)? A: Yes, the MT49H8M36BM-33:B TR supports ECC functionality for data integrity and error detection/correction.

  10. Q: Is the MT49H8M36BM-33:B TR compatible with other memory modules? A: The MT49H8M36BM-33:B TR follows industry-standard specifications and can be used alongside compatible memory modules in a system.

Please note that the answers provided here are based on general knowledge about SDRAMs and may not cover all specific details of the MT49H8M36BM-33:B TR. It's always recommended to refer to the official datasheet or consult the manufacturer for accurate and up-to-date information.