MT47H512M4EB-25E:C

Product Overview

Category

MT47H512M4EB-25E:C belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a main memory component in various electronic devices, such as computers, servers, and embedded systems.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compatible with standard memory interfaces

Package

MT47H512M4EB-25E:C is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of MT47H512M4EB-25E:C lies in its ability to provide reliable and efficient data storage and retrieval functions for electronic devices.

Packaging/Quantity

This product is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabytes (MB)
• Organization: 4 Megabits x 16 bits x 4 banks
• Operating Voltage: 1.5V
• Speed Grade: PC3-12800 (DDR3-1600)
• CAS Latency: CL11
• Refresh Rate: 8K cycles/32ms

Detailed Pin Configuration

The MT47H512M4EB-25E:C module has a total of 204 pins arranged in a specific configuration. The pinout diagram is as follows:

[Pin Diagram]

Functional Features

• High-speed data transfer rates
• Low power consumption
• Error correction capabilities
• On-die termination (ODT) for improved signal integrity
• Auto self-refresh and power-down modes for power management

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Compatible with standard memory interfaces
• Error correction capabilities enhance data reliability

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher power consumption compared to non-volatile memory types
• Limited lifespan due to finite write cycles

Working Principles

MT47H512M4EB-25E:C operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain their charge. When data is read or written, the memory controller sends appropriate signals to access specific memory cells.

Detailed Application Field Plans

MT47H512M4EB-25E:C finds applications in a wide range of electronic devices, including: - Personal computers - Laptops and notebooks - Servers and workstations - Networking equipment - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H512M4EB-25E:C include: - MT47H256M8EB-25E:C - MT47H1G16FB-25E:C - MT47H64M16HR-25E:C - MT47H128M16RT-25E:C

These models vary in terms of capacity, organization, and speed grade, allowing users to choose the most suitable option for their specific requirements.

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