MT45W1MW16BDGB-708 AT

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Large storage capacity
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory technology
• Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

• Memory Type: NAND Flash
• Capacity: 1 gigabit (128 megabytes)
• Organization: 1 bank of 2,048 pages, each page containing 4,096 bytes
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT45W1MW16BDGB-708 AT has a total of 48 pins. Here is the detailed pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A11 | Address inputs | | 3 | CE | Chip enable | | 4 | WE | Write enable | | 5 | RE | Read enable | | 6 | CLE | Command latch enable | | 7 | ALE | Address latch enable | | 8 | WP | Write protect | | ... | ... | ... | | 48 | GND | Ground |

Functional Features

• Fast data transfer rate
• Reliable and durable storage solution
• Error correction capabilities
• Block erase and program operations
• Support for various read and write modes
• Internal data management algorithms for enhanced performance

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access
• Low power consumption helps conserve energy
• Large storage capacity accommodates extensive data needs
• Reliable and durable, ensuring data integrity
• Error correction capabilities enhance data reliability

Disadvantages

• Limited endurance compared to some other memory technologies
• Higher cost per unit compared to certain alternatives
• Requires additional circuitry for interfacing with the host system

Working Principles

The MT45W1MW16BDGB-708 AT utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on its floating gate. The memory is accessed through a parallel interface, allowing for fast data transfer between the chip and the host system.

Detailed Application Field Plans

The MT45W1MW16BDGB-708 AT is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Mobile phones - Tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP
• S34ML01G200TFI000
• IS43TR16256AL-125KBLI

These alternative models offer similar specifications and functionality to the MT45W1MW16BDGB-708 AT, providing options for different design requirements and availability.

In conclusion, the MT45W1MW16BDGB-708 AT is a high-performance NAND flash memory chip that offers fast data transfer, low power consumption, and large storage capacity. Its reliable and durable nature makes it suitable for various electronic devices, and it is commonly used in mobile phones, tablets, digital cameras, and more. While it has some limitations, such as limited endurance and higher cost, there are alternative models available to cater to different needs.