MT41K256M16HA-125 AIT:E

Product Overview

Category

MT41K256M16HA-125 AIT:E belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High capacity: The MT41K256M16HA-125 AIT:E has a capacity of 4 gigabits (Gb), allowing for large amounts of data to be stored.
• High speed: With a maximum operating frequency of 125 MHz, this DRAM module offers fast data access and transfer rates.
• Low power consumption: The MT41K256M16HA-125 AIT:E is designed to consume minimal power, making it energy-efficient.
• Reliable performance: This module is built with advanced technology to ensure reliable and stable operation.

Package

The MT41K256M16HA-125 AIT:E comes in a compact and standardized package, which is compatible with industry-standard memory slots.

Essence

The essence of the MT41K256M16HA-125 AIT:E lies in its ability to provide high-speed and reliable data storage and retrieval capabilities.

Packaging/Quantity

This product is typically packaged in trays or reels, containing multiple units per package. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Organization: 256M words x 16 bits
• Operating Voltage: 1.35V
• Clock Frequency: Up to 125 MHz
• Data Rate: Up to 1600 Mbps
• CAS Latency: CL11
• Refresh Rate: 8K cycles/32ms

Detailed Pin Configuration

The MT41K256M16HA-125 AIT:E has a total of 78 pins, which are arranged as follows:

• Pin 1: VSS (Ground)
• Pin 2: DQ0 (Data Input/Output Bit 0)
• Pin 3: DQ1 (Data Input/Output Bit 1)
• ...
• Pin 76: VDD (Power Supply)
• Pin 77: VREF (Reference Voltage)
• Pin 78: VSS (Ground)

Please refer to the product datasheet for the complete pin configuration diagram.

Functional Features

• High-speed data access: The MT41K256M16HA-125 AIT:E offers fast read and write operations, enabling quick data processing.
• Error correction: This module incorporates error correction code (ECC) functionality, enhancing data integrity and reliability.
• Auto-refresh capability: The DRAM module automatically performs periodic refresh operations to maintain data integrity.
• Burst mode support: It supports burst mode operations, allowing for efficient data transfer between the memory and the processor.

Advantages and Disadvantages

Advantages

• High capacity and speed
• Low power consumption
• Reliable performance
• Error correction capability

Disadvantages

• Limited compatibility with older systems that do not support DDR3 SDRAM

Working Principles

The MT41K256M16HA-125 AIT:E operates based on the principles of dynamic random-access memory. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain data integrity. When data is requested, the module retrieves it by accessing the appropriate memory cells and transferring the data to the requesting device.

Detailed Application Field Plans

The MT41K256M16HA-125 AIT:E is widely used in various applications, including: - Computer systems - Servers - Networking equipment - Graphics processing units (GPUs) - High-performance computing (HPC) systems - Embedded systems

Detailed and Complete Alternative Models

• MT41K256M16HA-125 AIT:E is part of the MT41K256M16 family, which includes variants with different operating frequencies and capacities.
• Other alternative models from different manufacturers include:
  • Samsung K4B2G1646E-BCK0
  • Micron MT41K256M16TW-107 IT:P
  • Hynix H5TC4G63AFR-PBA

These alternative models offer similar functionality and can be considered as substitutes for the MT41K256M16HA-125 AIT:E.

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