MT29F64G08CFACBWP-12:C

Product Overview

Category

MT29F64G08CFACBWP-12:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CFACBWP-12:C offers a storage capacity of 64 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and reliability.
• Low power consumption: It consumes minimal power, making it suitable for portable devices.
• Compact package: MT29F64G08CFACBWP-12:C comes in a small form factor, enabling its integration into space-constrained devices.
• RoHS compliant: The product adheres to the Restriction of Hazardous Substances directive, ensuring environmental safety.

Package and Quantity

MT29F64G08CFACBWP-12:C is packaged in a Ball Grid Array (BGA) package. Each package contains one unit of the NAND flash memory chip.

Specifications

• Part Number: MT29F64G08CFACBWP-12:C
• Memory Type: NAND Flash
• Capacity: 64 gigabytes
• Voltage Supply: 2.7V - 3.6V
• Interface: Parallel
• Organization: 8 bits x 8192 pages x 2048 blocks
• Operating Temperature: -40°C to +85°C
• Speed Grade: 12 (tRC = 120 ns)

Pin Configuration

The detailed pin configuration of MT29F64G08CFACBWP-12:C is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. NC
36. NC
37. NC
38. NC
39. NC
40. GND

Functional Features

• Page Read/Program/Erase Operations: MT29F64G08CFACBWP-12:C supports efficient read, program, and erase operations at the page level.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): The NAND flash memory utilizes ECC techniques to ensure data integrity and reliability.
• Wear-Leveling: The wear-leveling algorithm evenly distributes write operations across the memory blocks, preventing premature wear-out.
• Bad Block Management: It includes mechanisms to identify and manage bad blocks, ensuring reliable operation even in the presence of defective memory cells.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Low power consumption makes it suitable for portable devices.
• Compact package facilitates integration into space-constrained devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F64G08CFACBWP-12:C utilizes the NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. The stored data can be read, programmed, or erased at the page level using specific voltage levels and control signals.

During a read operation, the memory controller applies appropriate voltages to the selected memory cells and reads the resulting electrical currents to determine the stored data. Programming involves applying high voltages to modify the charge on the floating gate, while erasing clears the charge from the selected cells.

The memory controller manages various operations, including wear-leveling, bad block management, and error correction, to ensure reliable performance and data integrity.

Detailed Application Field Plans

MT29F64G08CFACBWP-12:C finds extensive application