IXYS
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
IXTH67N10
Voir les détails DataSheets

IXTH67N10

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high current applications
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-247
Essence: Power MOSFET for high-current switching applications
Packaging/Quantity: Available in reels of 50 units

Specifications

  • Voltage Rating: 100V
  • Continuous Drain Current: 67A
  • RDS(ON): 10mΩ
  • Gate Threshold Voltage: 2.5V
  • Maximum Power Dissipation: 300W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient operation
  • High voltage capability for versatile applications

Advantages

  • High current handling capability
  • Low on-resistance for reduced power loss
  • Versatile applications due to high voltage rating

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Larger package size may not be suitable for compact designs

Working Principles

The IXTH67N10 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows a high current to flow through it with minimal resistance.

Detailed Application Field Plans

  1. Power Supplies: Utilized in high-power switch-mode power supplies for efficient energy conversion.
  2. Motor Control: Employed in motor drive circuits for controlling high-current motors.
  3. High Current Applications: Used in various high current applications such as welding equipment and battery management systems.

Detailed and Complete Alternative Models

  1. IXTH63N10: Similar specifications with a slightly lower continuous drain current of 63A.
  2. IXTH60N10: Lower continuous drain current at 60A but with similar voltage and on-resistance characteristics.

This comprehensive entry provides an in-depth understanding of the IXTH67N10 Power MOSFET, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Énumérez 10 questions et réponses courantes liées à l'application de IXTH67N10 dans les solutions techniques

Sure, here are 10 common questions and answers related to the application of IXTH67N10 in technical solutions:

  1. What is IXTH67N10?

    • IXTH67N10 is a high voltage power MOSFET designed for various applications such as motor control, power supplies, and inverters.

  2. What is the maximum voltage rating of IXTH67N10?

    • The maximum voltage rating of IXTH67N10 is 1000V.

  3. What is the maximum current rating of IXTH67N10?

    • The maximum continuous drain current rating of IXTH67N10 is 67A.

  4. What are the typical applications of IXTH67N10?

    • Typical applications of IXTH67N10 include industrial motor drives, solar inverters, UPS systems, and welding equipment.

  5. What are the key features of IXTH67N10?

    • The key features of IXTH67N10 include low RDS(on), fast switching speed, and high ruggedness.

  6. What is the thermal resistance of IXTH67N10?

    • The thermal resistance of IXTH67N10 is typically 0.35°C/W.

  7. Can IXTH67N10 be used in automotive applications?

    • Yes, IXTH67N10 can be used in automotive applications such as electric vehicle powertrains and battery management systems.

  8. What is the operating temperature range of IXTH67N10?

    • The operating temperature range of IXTH67N10 is -55°C to 175°C.

  9. Does IXTH67N10 require a heat sink for operation?

    • It is recommended to use a heat sink for IXTH67N10 to ensure optimal thermal performance, especially in high-power applications.

  10. Is IXTH67N10 suitable for high-frequency switching applications?

    • Yes, IXTH67N10 is suitable for high-frequency switching due to its fast switching speed and low gate charge characteristics.