Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-264
Essence: Power semiconductor device
Packaging/Quantity: Single unit
The IXFN170N10 features a standard TO-264 package with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - High voltage and current ratings - Low on-state resistance - Fast switching speed
Disadvantages: - Relatively high gate threshold voltage - Limited operating temperature range
The IXFN170N10 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.
The IXFN170N10 is suitable for a wide range of high-power applications, including: - Motor drives - Power supplies - Inverters - Welding equipment - Uninterruptible power supplies (UPS)
IXFN180N10
IXFN160N10
IXFN150N10
This completes the entry for IXFN170N10 in the English editing encyclopedia format.
What is the maximum drain current of IXFN170N10?
What is the maximum voltage rating of IXFN170N10?
What is the on-state resistance (RDS(on)) of IXFN170N10?
Can IXFN170N10 be used in high-power applications?
What type of package does IXFN170N10 come in?
Is IXFN170N10 suitable for motor control applications?
Does IXFN170N10 require a heatsink for operation?
What are the typical applications of IXFN170N10?
What is the gate threshold voltage of IXFN170N10?
Is IXFN170N10 suitable for use in automotive applications?