Ampleon USA Inc.
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BLF7G20LS-90P,118
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BLF7G20LS-90P,118

Product Overview

Category

The BLF7G20LS-90P,118 belongs to the category of RF power transistors.

Use

It is used in high-frequency applications such as radio frequency (RF) amplification in communication systems.

Characteristics

  • High power gain
  • High efficiency
  • Broadband capability
  • Compact package size

Package

The BLF7G20LS-90P,118 is packaged in a small outline transistor (SOT502) package.

Essence

The essence of this product lies in its ability to amplify RF signals with high power and efficiency.

Packaging/Quantity

The BLF7G20LS-90P,118 is typically supplied in reels containing a specific quantity based on customer requirements.

Specifications

  • Frequency range: 0.1 to 2.5 GHz
  • Output power: 20 W
  • Efficiency: >60%
  • Gain: >13 dB
  • Package type: SOT502

Detailed Pin Configuration

The BLF7G20LS-90P,118 has a pin configuration consisting of input, output, and bias connections. The detailed pinout can be found in the product datasheet.

Functional Features

  • High power amplification
  • Wide frequency coverage
  • High efficiency operation
  • Compact and lightweight design

Advantages

  • High power gain
  • Broadband capability
  • Compact package size
  • Suitable for high-frequency applications

Disadvantages

  • Limited output power compared to some other RF power transistors
  • May require additional heat dissipation measures at higher power levels

Working Principles

The BLF7G20LS-90P,118 operates based on the principles of RF amplification, utilizing advanced semiconductor technology to achieve high power gain and efficiency.

Detailed Application Field Plans

The BLF7G20LS-90P,118 is suitable for use in various communication systems including cellular base stations, radar systems, and broadcast transmitters. It can also be employed in industrial and scientific applications requiring high-power RF amplification.

Detailed and Complete Alternative Models

  • BLF888A
  • BLF578XR
  • BLF2425M6L

In conclusion, the BLF7G20LS-90P,118 is a high-performance RF power transistor designed for a wide range of high-frequency applications. Its compact size, high power gain, and efficiency make it a valuable component in modern communication and industrial systems.

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Énumérez 10 questions et réponses courantes liées à l'application de BLF7G20LS-90P,118 dans les solutions techniques

  1. What is the maximum power dissipation of BLF7G20LS-90P,118?

    • The maximum power dissipation of BLF7G20LS-90P,118 is 90 watts.

  2. What is the typical gain of BLF7G20LS-90P,118?

    • The typical gain of BLF7G20LS-90P,118 is 20 dB.

  3. What is the operating frequency range of BLF7G20LS-90P,118?

    • The operating frequency range of BLF7G20LS-90P,118 is from 0.03 GHz to 2.5 GHz.

  4. What are the recommended bias conditions for BLF7G20LS-90P,118?

    • The recommended bias conditions for BLF7G20LS-90P,118 are Vdd = 28 V and Idq = 1500 mA.

  5. What is the input and output impedance of BLF7G20LS-90P,118?

    • The input and output impedance of BLF7G20LS-90P,118 is 50 ohms.

  6. What is the typical efficiency of BLF7G20LS-90P,118 at P1dB?

    • The typical efficiency of BLF7G20LS-90P,118 at P1dB is 60%.

  7. What is the recommended thermal resistance for BLF7G20LS-90P,118?

    • The recommended thermal resistance for BLF7G20LS-90P,118 is 0.9°C/W.

  8. What are the typical applications for BLF7G20LS-90P,118?

    • BLF7G20LS-90P,118 is commonly used in RF power amplifiers for wireless infrastructure applications.

  9. What is the package type of BLF7G20LS-90P,118?

    • BLF7G20LS-90P,118 comes in a ceramic SMD package.

  10. What are the key differences between BLF7G20LS-90P,118 and its previous versions?

    • BLF7G20LS-90P,118 offers improved efficiency and linearity compared to its previous versions, making it suitable for advanced technical solutions.